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March 2013
?
FDB8443
N-Channel PowerTrench
40 V, 182 A, 3.0 m Ω
MOSFET
tm
Features
R DS(on) = 2.3 m Ω ( Typ.)@ V GS = 10 V, I D = 80 A
Q G(tot) = 142 nC ( Typ.)
Low Miller Charge, Q GD = 32 nC( Typ.)
UIS Capability (Single Pulse and Repetitive Pulse)
RoHS Compliant
D
Applications
Power Tools
Motor drives and Uninterruptible Power Supplies
Synchronous Rectification
Battery Protection Circuit
G
S
D2-PAK
(TO-263)
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
Symbol
V DSS
Drain to Source Voltage
Parameter
FDB8443
40
Unit
V
V GS
I D
I DM
E AS
P D
Gate to Source Voltage
Drain Current
Drain Current
Single Pulse Avalanche Energy
Power Dissipation
Derate above 25 o C
- Continuous (T C = 25 o C, Silicon Limited)
- Continuous (T C = 100 o C, Silicon Limited)
- Continuous (T C = 25 o C, Package Limited)
- Continuous (T A = 25 o C, R θ JA = 43 o C/W)
- Pulsed
(Note 1)
±20
182*
129*
120
25
See Figure 4
531
188
1.25
V
A
mJ
W
W/ o C
T J , T STG Operating and Storage Temperature
-55 to +175
o
C
* Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol
Parameter
FDB8443
Unit
R θ JC
Thermal Resistance Junction to Case, Max.
0.8
o
C/W
R θ JA
Thermal Resistance Junction to Ambient, Max.
(Note 2)
62
o
C/W
Thermal Resistance Junction to Ambient TO-263, 1in copper pad area, Max.
R θ JA
2
43
o
C/W
?2010 Fairchild Semiconductor Corporation
FDB8443 Rev. C1
1
www.fairchildsemi.com
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